A HIGH SPEED SiGe VCO BASED ON SELF INJECTION LOCKING SCHEME
نویسندگان
چکیده
This paper discusses the design and implementation of an inductorless differential VCO with a maximum oscillation frequency of 20 GHz, in a 47 GHz SiGe process technology. The VCO is based on a full-wave rectification frequency-doubling technique, applied to a half rate differential single-stage feedback oscillator. It also benefits from a new circuit phenomenon named hereinafter Self Injection Locking (SIL). The implemented VCO has an area of 0.5 mm and features a remarkably high ratio of VCO frequency to process fT. Based on measurement results, the VCO consumes a DC power of less than 165 mW and exhibits a phase noise of -96 dBc/Hz at 1 MHz offset. Keywords– Silicon germanium (SiGe), heterojunction bipolar transistor (HBT), high-speed circuit, voltagecontrolled oscillator (VCO), phase noise, differential stage, injection locking oscillator
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